Internal Electric Field Profiling of 2D P-N Junctions of Semiconductor Devices by 4D STEM and Dual Lens Electron Holography
نویسندگان
چکیده
Abstract: The internal electric field of a 2D P-N junction semiconductor is mapped out by two techniques: measuring the deflection transmitted beam in micro-STEM mode with acquisition and data fitting an un-scattered image, through derivative electrostatic potential maps dual lens electron holography. Comparable results measured these techniques are reported.
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ژورنال
عنوان ژورنال: Microscopy Today
سال: 2022
ISSN: ['2150-3583', '1551-9295']
DOI: https://doi.org/10.1017/s1551929521001577